Abstract

• Copper tin Sulphide (CTS) thin films were prepared by chemically bath deposited in aqueous solutions containing sources of copper, tin and sulphur. The effect of different molar concentration of complexing agent on the growth of thin films was reported. The structure, optical and surface topography characteristics of thin films of copper tin sulphide grown on glass substrates were investigated by X-ray diffraction, UV-Vis spectrophotometry and atomic force microscopy techniques. The X-ray diffraction showed that the most prominent peak at 2θ = 50.60° which belong to (223) plane of Cu4SnS4. The atomic force microscopy indicated that the film deposited at the concentration of 0.1 M complexing agent exhibited narrow optical band-gap which is the requisite for light absorber layer in solar cell application. The band gap energy was found to be 1.5 eV with direct transition.