Abstract

• PbTiO3: Sr thin film devices are prepared by colloidal solution route at different Sr contents. Structural features of prepared samples are examined with the help of x - rays diffraction technique. From the x - rays spectra, lattice dimensions, such as lattice constants, lattice distortion, unit cell volume, crystallite size and lattice micro strain of prepared samples at different Sr contents are evaluated. It is obvious that, there are single phase, tetragonal, polycrystalline and perovskite - type PbTiO3 structure in prepared samples. FET behavior, known as drain and transfer characteristics of prepared samples are also studied. From the drain characteristic, operation of prepared samples is either enhancement mode or depletion mode is determined. It is obtained that; operations of prepared samples are enhancement mode and normally off nature. Maximum drain current threshold voltage and transconductance values are estimated from the transfer variations. Ferroelectric properties of prepared samples are characterized by using Sawyer - Tower circuit and ferroelectric parameters are investigated. It is known that, ferroelectric parameters (Ps, Pr and Ec) increase as Sr content increases in prepared samples. It might be due to strengthing of second order hybridization, caused by isovalent Sr2+ ions in prepared samples. It may be conclude that, our prepared samples are suitable for one transistor (1T) of FeRAM application.