Abstract

• Aluminum oxide (Al2O3) moisture less powder was formed by mixing aluminum nitrate nonahydrate (Al (NO3)3.9H2O) and glycine (C2H5NO2) via auto combustion method. X-ray diffraction (XRD) and Scanning Electron Microscope (SEM) techniques were used to examine the structure and microstructural properties of Al2O3 powder. The structure of Al2O3/SiO2/Si cell exhibited the schottky barrier height and could not indicate the tunnel diode nature. Thus, the P2O5 insertion layer was added onto the SiO2 layer. Phosphorus (P2O5) diffusion was made on the SiO2/p-Si (100) substrate and annealed at 550 oC for 1 h to form p + p design. The SEM was employed to observe the surface morphology and thickness of P2O5 layer. The Al2O3 sol-solution was deposited onto P2O5/SiO2/Si substrate by spin coating technique. The microstructure and film thickness of Al2O3 layer were also examined by SEM. The charge conduction mechanism of Al2O3 film was identified by C -2 -V characteristics. The change in peak current and the valley current with respect to annealing temperatures were studied.