Abstract

• A series of Sb-doped samples, SnO2 with doping levels 2mo 4 mol%, 4 mol%, 6 mol%, 8 mol% have been prepared by sol-gel and spiin coating methods. The structural properties of samples were characterized by X-ray Diffraction (XRD) analysis. The microstructural and morphology properties were examined by Scanning Electro microscopy (SEM).The optical properties of the samples were investigated by UV-Vis spectroscopy. According to UV-Vis spectroscopy, the band gap of SnO2 :Sb varied from 3.2 eV to 3.7 eV with variation of Sb dopant concentration .According to the result, it was observed that the structural studies of Sb doped thin films devices were successfully fabricated.