Abstract

• The undoped SnO2, Cu, Al and In (5mol%) doped SnO2 thin films were deposited on glass substrates by sol-gel and spin coating technique. The effect of Cu, Al and In doping on the optical and electrical properties of the SnO2 thin films were studied. The optical transmittance of thin films was measured and the optical band gap Eg values of the films were obtained in the range of 3.4 - 4.00 eV using the Tauc relation. The electrical transport properties of undoped, Cu, Al and In doped SnO2 thin films were investigated by mean of current-voltage (I-V) measurement using simple diode model. The important diode parameters such as ideality factor, saturation current, and barrier height are also calculated.