Abstract

• Manganese (3%, 6%, 9% and 12%) doped titanium oxide, MnTiO2 thin films were prepared by sol–gel synthesis and deposited onto the silicon substrates using spin coating technique. The morphologies of the Mn doped TiO2 thin films were analyzed using scanning electron microscope (SEM) and the surface observation showed a rather good density of grains without cracks. The crystalline phase and particle size of the films were examined by X-ray diffraction (XRD) measurement. The calculated crystallite sizes (by Scherrer’s relation), lattice constants and cell volumes were increased with increasing Mn doping percentage. Furthermore, capacitance-voltage measurements of all the films were performed with varying frequencies (0.1 kHz to 100 kHz) using a LCR meter and the effects of dopant concentration of manganese on the dielectric behavior in MnTiO2 thin films were investigated.