Abstract

• Synthesis methods are needed for its growth on wafer scale to bring graphene to the production level. One of the more promising production techniques to synthesize large area graphene is chemical vapor deposition (CVD) onto transition copper substrates. Recently copper has gained popularity as an important substrate material for graphene growth due to its lower carbon solubility, which allows better control over number of graphene layers. CVD growth has been performed at temperatures ranging from 1000.C to 1050.C using methane as the carbon source with diluted in a suitable mixture of argon (Ar) and hydrogen (H2). It was found that apart from growth parameters surface texture plays a very important role in graphene growth. The growth mechanism of graphene on copper is surface related and surface morphology was determined by Scanning Electron Microscopy (SEM) and Raman spectroscopy was used to distinguish number of layers on gaphene deposition on copper foil.