TEMPERATURE DEPENDENT CHARACTERIATION OF AL DOPED TiO2 PARTICLES
Abstract
- Alx, TiO2 (1-x)(Al 5, 10 and 15 wt %) doped Titanium dioxide thin films prepared by thermal diffusion technique. The Aluminium and Titanium dioxide mixed samples are annealed in temperature controller furnace at different temperature scale for each sample are 400C, 500C, 600C, 700C and 800C for two hours. The samples are characterized by X-ray diffraction technique (XRD). The band gap energy of all doped sample are studied by Ultra-Violet visible absorption spectroscopy (UV-Vis). The surface morphology and grain size of samples are measured by Scanning Electron Microscopy (SEM). X-ray diffraction result reveal the tetragonal structure of samples with secondary phase formation changed depend on increasing temperatures. The Ultra-violet visible absorption spectroscopy studies Aluminium doped Titanium dioxide show the band gap differs from Titanium dioxide anatase form. The Aluminium doped Titanium dioxide samples are deposited on glass and p-type Si (100) substrates by screen printing method. The Aluminium doped Titanium dioxide deposited on glass thin films are heating temperature 200C for 30 minutes. The Aluminium doped Titanium dioxide deposited on p-type Si substrate thin films are heating temperature 300C to 800C for one hour.The electrical properties of Aluminium doped Titanium dioxide deposited on glass and Si substrate thin films are measured by standard electrical devices.
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Year
- 2018
Author
-
Hla Toe
Subject
- Physics
Publisher
- Myanmar Academy of Arts and Science (MAAS)